BSC350N20NSFDATMA1
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 35A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.035Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Avalanche Energy Rating (Eas) | 97 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 1.1mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 90μA |
See Relate Datesheet
