Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Reach Compliance Code | not_compliant |
Pin Count | 8 |
JESD-30 Code | R-PDSO-F5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 125W Tc |
Factory Lead Time | 1 Week |
Operating Mode | ENHANCEMENT MODE |
Contact Plating | Tin |
Power Dissipation | 125W |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Case Connection | DRAIN |
Package / Case | 8-PowerTDFN |
FET Type | N-Channel |
Number of Pins | 8 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Rds On (Max) @ Id, Vgs | 60m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 90μA |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2350pF @ 100V |
Published | 2011 |
Current - Continuous Drain (Id) @ 25°C | 25A Tc |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Series | OptiMOS™ |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
JESD-609 Code | e3 |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 25A |
Pbfree Code | no |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 250V |
Part Status | Active |
Drain-source On Resistance-Max | 0.06Ohm |
REACH SVHC | No SVHC |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Number of Terminations | 5 |
ECCN Code | EAR99 |