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BSC670N25NSFDATMA1

BSC670N25NSFDATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC670N25NSFDATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 451
  • Description: BSC670N25NSFDATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 67m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 125V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.067Ohm
Pulsed Drain Current-Max (IDM) 96A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 69 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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