banner_page

BSF030NE2LQXUMA1

Trans MOSFET N-CH 25V 24A 2-Pin WDSON


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSF030NE2LQXUMA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 484
  • Description: Trans MOSFET N-CH 25V 24A 2-Pin WDSON (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Silver
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-WDSON
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series OptiMOS™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 2
JESD-30 Code R-MBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 28W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 12V
Current - Continuous Drain (Id) @ 25°C 24A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3.4ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.6 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0041Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 50 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good