Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Silver |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | OptiMOS™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Pin Count | 2 |
JESD-30 Code | R-MBCC-N2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.2W Ta 28W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 2.8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 24A Ta 75A Tc |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Rise Time | 3.4ns |
Drain to Source Voltage (Vdss) | 25V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 2.6 ns |
Turn-Off Delay Time | 18 ns |
Continuous Drain Current (ID) | 24A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 75A |
Drain-source On Resistance-Max | 0.0041Ohm |
Pulsed Drain Current-Max (IDM) | 300A |
DS Breakdown Voltage-Min | 25V |
Avalanche Energy Rating (Eas) | 50 mJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |