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BSH103,215

MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Power dissipation: 500 mW


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BSH103,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 151
  • Description: MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Power dissipation: 500 mW (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.75
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 540mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 400mV @ 1mA (Min)
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 24V
Current - Continuous Drain (Id) @ 25°C 850mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 850mA
Drain Current-Max (Abs) (ID) 0.85A
Drain-source On Resistance-Max 0.5Ohm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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