Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 200m Ω @ 600mA, 4.5V |
Vgs(th) (Max) @ Id | 570mV @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 152pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 1.05A Ta |
Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Continuous Drain Current (ID) | 1.05A |
Drain-source On Resistance-Max | 0.25Ohm |
DS Breakdown Voltage-Min | 20V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1998 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
HTS Code | 8541.21.00.95 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 417mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 417mW |
FET Type | N-Channel |