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BSH105,215

MOSFET N-CH 20V 1.05A SOT23


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BSH105,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 517
  • Description: MOSFET N-CH 20V 1.05A SOT23 (Kg)

Details

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Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 570mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 152pF @ 16V
Current - Continuous Drain (Id) @ 25°C 1.05A Ta
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 1.05A
Drain-source On Resistance-Max 0.25Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.21.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 417mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 417mW
FET Type N-Channel
See Relate Datesheet

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