BSH205G2R
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 480mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 170m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 418pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 2A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain-source On Resistance-Max | 0.17Ohm |
| DS Breakdown Voltage-Min | 20V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
