BSL202SNH6327XTSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 8.26 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 7.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 30μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1147pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V |
| Rise Time | 27.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Turn-Off Delay Time | 18.9 ns |
| Continuous Drain Current (ID) | 7.5A |
| Threshold Voltage | 950mV |
| Gate to Source Voltage (Vgs) | 12V |
| Max Dual Supply Voltage | 20V |
| Drain-source On Resistance-Max | 0.022Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Avalanche Energy Rating (Eas) | 30 mJ |
| Height | 1.1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
