Parameters | |
---|---|
Width | 1.6mm |
REACH SVHC | No SVHC |
Factory Lead Time | 1 Week |
RoHS Status | ROHS3 Compliant |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Lead Free | Contains Lead |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | -6A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Power Dissipation-Max | 2W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 9 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 41m Ω @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 40μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1007pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Rise Time | 17ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Turn-Off Delay Time | 42 ns |
Continuous Drain Current (ID) | 6A |
Threshold Voltage | -900mV |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | -20V |
Drain Current-Max (Abs) (ID) | 6A |
Pulsed Drain Current-Max (IDM) | 24A |
Avalanche Energy Rating (Eas) | 44 mJ |
Height | 1mm |
Length | 2.9mm |