banner_page

BSL211SPH6327XTSA1

MOSFET P-CH 20V 4.7A 6TSOP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSL211SPH6327XTSA1
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 323
  • Description: MOSFET P-CH 20V 4.7A 6TSOP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -4.7A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 67m Ω @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 25μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 654pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.7A Ta
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 10V
Rise Time 13.9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 23.3 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 4.7A
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage -20V
Drain to Source Breakdown Voltage -20V
Height 1mm
Length 2.9mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good