Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2W Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 6.4 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 25m Ω @ 7.1A, 10V |
Vgs(th) (Max) @ Id | 2V @ 30μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 7.1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V |
Rise Time | 2.8ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 1.9 ns |
Turn-Off Delay Time | 13.7 ns |
Continuous Drain Current (ID) | 7.1A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain-source On Resistance-Max | 0.025Ohm |
Pulsed Drain Current-Max (IDM) | 28A |
Avalanche Energy Rating (Eas) | 30 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |