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BSL302SNH6327XTSA1

MOSFET N-CH 30V 7.1A 6TSOP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSL302SNH6327XTSA1
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 545
  • Description: MOSFET N-CH 30V 7.1A 6TSOP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id 2V @ 30μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.1A Ta
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.9 ns
Turn-Off Delay Time 13.7 ns
Continuous Drain Current (ID) 7.1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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