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BSL305SPEH6327XTSA1

Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2W; PG-TSOP-6


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSL305SPEH6327XTSA1
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 292
  • Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2W; PG-TSOP-6 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 939pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.3A
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 21.2A
Avalanche Energy Rating (Eas) 20 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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