Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -5.5A |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Power Dissipation-Max | 2W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 7.3 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 43m Ω @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 40μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 805pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 5.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Rise Time | 8.4ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 29 ns |
Turn-Off Delay Time | 36.4 ns |
Continuous Drain Current (ID) | 5.5A |
Threshold Voltage | -1.5V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -30V |
Drain-source On Resistance-Max | 0.043Ohm |
Pulsed Drain Current-Max (IDM) | 22A |
Avalanche Energy Rating (Eas) | 44 mJ |
Height | 1mm |
Length | 2.9mm |
Width | 1.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |