BSL716SNH6327XTSA1
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 13.1nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 2.5A |
| Max Dual Supply Voltage | 75V |
| Drain-source On Resistance-Max | 0.15Ohm |
| Pulsed Drain Current-Max (IDM) | 10A |
| Avalanche Energy Rating (Eas) | 33 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2W Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 218μA |
| Halogen Free | Halogen Free |
See Relate Datesheet
