BSM35GD120DN2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 17 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Published | 1999 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 17 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 280W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 17 |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Power Dissipation | 280W |
| Case Connection | ISOLATED |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 50A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.7V |
| Turn On Time | 120 ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 450 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 2nF @ 25V |
| VCEsat-Max | 3.2 V |
| Height | 17mm |
| Length | 107.5mm |
| Width | 45.5mm |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
