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BSM50GD120DN2BOSA1

IGBT 2 LOW POWER ECONO2-2


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSM50GD120DN2BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 907
  • Description: IGBT 2 LOW POWER ECONO2-2 (Kg)

Details

Tags

Parameters
Mount Screw, Through Hole
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 17
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Published 2007
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
ECCN Code EAR99
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 17
Number of Elements 6
Configuration Full Bridge
Power Dissipation 350W
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 72A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 50A
Turn Off Time-Nom (toff) 450 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Height 17mm
Length 107.5mm
Width 45mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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