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BSM75GB120DN2HOSA1

IGBT MOD 1200V 105A 625W


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSM75GB120DN2HOSA1
  • Package: Module
  • Datasheet: -
  • Stock: 164
  • Description: IGBT MOD 1200V 105A 625W (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1.5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 105A
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
Turn Off Time-Nom (toff) 520 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.5nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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