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BSM75GB170DN2HOSA1

IGBT 1700V 110A 625W MODULE


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSM75GB170DN2HOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 225
  • Description: IGBT 1700V 110A 625W MODULE (Kg)

Details

Tags

Parameters
Number of Pins 34
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Published 1999
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Max Power Dissipation 625W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 625W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 110A
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 11nF
Turn On Time 550 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Turn Off Time-Nom (toff) 740 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 11nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Module
See Relate Datesheet

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