BSN20BKR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 310mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 7.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 20.2pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 265mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.49nC @ 4.5V |
| Rise Time | 8.4ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.1 ns |
| Turn-Off Delay Time | 12.5 ns |
| Continuous Drain Current (ID) | 265mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.265A |
| DS Breakdown Voltage-Min | 60V |
| Feedback Cap-Max (Crss) | 7 pF |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
