Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 13A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.56W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.56W |
Turn On Delay Time | 5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9.7m Ω @ 13A, 10V |
Vgs(th) (Max) @ Id | 2V @ 30μA |
Input Capacitance (Ciss) (Max) @ Vds | 2130pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 10A Tc |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
Rise Time | 4.2ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 4.2 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 10A |
JEDEC-95 Code | MS-012AA |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0097Ohm |
Drain to Source Breakdown Voltage | 30V |
Feedback Cap-Max (Crss) | 110 pF |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |