Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 136nC @ 10V |
Rise Time | 22ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 12.6A |
Threshold Voltage | -1.5V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -30V |
Pulsed Drain Current-Max (IDM) | 60A |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | R-PDSO-G5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.79W Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 8m Ω @ 14.9A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 5890pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 12.6A Ta |