Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC | 55V |
Max Power Dissipation | 2W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 5A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BSO604NS2 |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Power - Max | 2W |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 35m Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 30μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Rise Time | 8ns |
Continuous Drain Current (ID) | 5A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 55V |
Drain Current-Max (Abs) (ID) | 5A |
Drain-source On Resistance-Max | 0.044Ohm |
Pulsed Drain Current-Max (IDM) | 20A |
Avalanche Energy Rating (Eas) | 90 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |