Parameters | |
---|---|
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Number of Pins | 4 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 8.3W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 8.3W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 100m Ω @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 3.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Rise Time | 8ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 6A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain Current-Max (Abs) (ID) | 3.5A |
Drain to Source Breakdown Voltage | 30V |
Nominal Vgs | 2 V |
Turn Off Time-Max (toff) | 75ns |
Height | 6.35mm |
Length | 6.35mm |
Width | 6.35mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |