BSP122,115
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 550mA |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 200V |
| Drain Current-Max (Abs) (ID) | 0.55A |
| Drain to Source Breakdown Voltage | 200V |
| Nominal Vgs | 2 V |
| Height | 1.7mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 2.5Ohm |
| HTS Code | 8541.29.00.75 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.5 Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 550mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 2.4V 10V |
See Relate Datesheet
