banner_page

BSP125H6327XTSA1

BSP125H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSP125H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 358
  • Description: BSP125H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Rise Time 14.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 120mA
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Nominal Vgs 1.9 V
Height 1.5mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1999
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Case Connection DRAIN
Turn On Delay Time 7.7 ns
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good