Parameters | |
---|---|
Max Dual Supply Voltage | 200V |
Drain Current-Max (Abs) (ID) | 0.66A |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 2.6A |
Dual Supply Voltage | 200V |
FET Feature | Depletion Mode |
Nominal Vgs | -1.4 V |
Height | 1.6mm |
Length | 6.5mm |
Width | 3.5mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2002 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |
Power Dissipation | 1.8W |
Case Connection | DRAIN |
Turn On Delay Time | 5.1 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.8 Ω @ 660mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 400μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 660mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Rise Time | 3.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 0V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 480mA |
Threshold Voltage | -1.4V |
Gate to Source Voltage (Vgs) | 20V |