Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | PG-SOT223-4 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2007 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.8W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 300m Ω @ 1.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 28ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 60 ns |
Turn-Off Delay Time | 92 ns |
Continuous Drain Current (ID) | -1.9A |
Threshold Voltage | -3V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -60V |
Drain-source On Resistance-Max | 0.3Ohm |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 7.6A |
Avalanche Energy Rating (Eas) | 70 mJ |
Height | 1.8mm |
Length | 6.5mm |
Width | 3.5mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |