Parameters | |
---|---|
Voltage | 60V |
REACH SVHC | No SVHC |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |
RoHS Status | ROHS3 Compliant |
Current | 19A |
Lead Free | Lead Free |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.8W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 300m Ω @ 1.9A, 10V |
Vgs(th) (Max) @ Id | 2V @ 460μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Rise Time | 25ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Fall Time (Typ) | 87 ns |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Turn-Off Delay Time | 208 ns |
Number of Pins | 4 |
Continuous Drain Current (ID) | 1.45A |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Threshold Voltage | 1.5V |
Published | 2005 |
Gate to Source Voltage (Vgs) | 20V |
Series | SIPMOS® |
Max Dual Supply Voltage | -60V |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Drain-source On Resistance-Max | 0.3Ohm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain to Source Breakdown Voltage | 60V |
Number of Terminations | 4 |
Termination | SMD/SMT |
Dual Supply Voltage | -60V |
Nominal Vgs | 1.5 V |
ECCN Code | EAR99 |
Feedback Cap-Max (Crss) | 55 pF |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Height | 1.6mm |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Length | 6.5mm |
Terminal Position | DUAL |
Width | 6.7mm |
Terminal Form | GULL WING |
Pin Count | 4 |
Radiation Hardening | No |
Number of Elements | 1 |