Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.8W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.8W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 300m Ω @ 1.9A, 10V |
Vgs(th) (Max) @ Id | 2V @ 460μA |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Rise Time | 25ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 87 ns |
Turn-Off Delay Time | 208 ns |
Continuous Drain Current (ID) | 1.9A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.3Ohm |
DS Breakdown Voltage-Min | 60V |
Feedback Cap-Max (Crss) | 55 pF |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |