Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Weight | 250.212891mg |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | PG-SOT223-4 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.8W |
Case Connection | DRAIN |
Turn On Delay Time | 3.5 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 600m Ω @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 100μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 152.7pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Rise Time | 7.9ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21.4 ns |
Turn-Off Delay Time | 18.4 ns |
Continuous Drain Current (ID) | 1.2A |
Threshold Voltage | 1.4V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 100V |
Drain-source On Resistance-Max | 0.6Ohm |
Drain to Source Breakdown Voltage | 100V |
Max Junction Temperature (Tj) | 150°C |
Height | 1.8mm |
Length | 6.5mm |
Width | 3.5mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |