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BSP299H6327XUSA1

Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSP299H6327XUSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 382
  • Description: Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 400mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage 500V
Nominal Vgs 3 V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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