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BSP300H6327XUSA1

Trans MOSFET N-CH 800V 0.19A Automotive 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSP300H6327XUSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 580
  • Description: Trans MOSFET N-CH 800V 0.19A Automotive 4-Pin(3+Tab) SOT-223 T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Voltage 800V
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 190mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 36 mJ
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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