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BSP317PH6327XTSA1

Trans MOSFET P-CH 250V 0.43A Automotive 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSP317PH6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 419
  • Description: Trans MOSFET P-CH 250V 0.43A Automotive 4-Pin(3+Tab) SOT-223 T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 5.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 430mA, 10V
Vgs(th) (Max) @ Id 2V @ 370μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 262pF @ 25V
Current - Continuous Drain (Id) @ 25°C 430mA Ta
Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 10V
Rise Time 11.1ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 67 ns
Turn-Off Delay Time 254 ns
Continuous Drain Current (ID) 430mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -250V
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage -250V
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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