Parameters | |
---|---|
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Factory Lead Time | 1 Week |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Contact Plating | Tin |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
Mount | Surface Mount |
Number of Elements | 1 |
Mounting Type | Surface Mount |
Number of Channels | 1 |
Package / Case | TO-261-4, TO-261AA |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Number of Pins | 4 |
Case Connection | DRAIN |
Weight | 250.212891mg |
Turn On Delay Time | 5.9 ns |
FET Type | P-Channel |
Transistor Element Material | SILICON |
Rds On (Max) @ Id, Vgs | 900m Ω @ 980mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 380μA |
Halogen Free | Halogen Free |
Operating Temperature | -55°C~150°C TJ |
Input Capacitance (Ciss) (Max) @ Vds | 319pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 980mA Tc |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Packaging | Tape & Reel (TR) |
Rise Time | 4.4ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Published | 2012 |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8.5 ns |
Turn-Off Delay Time | 16.5 ns |
Series | SIPMOS™ |
Continuous Drain Current (ID) | 980mA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -100V |
Drain Current-Max (Abs) (ID) | 0.98A |
JESD-609 Code | e3 |
Drain-source On Resistance-Max | 0.9Ohm |
Height | 3.5mm |
Length | 6.5mm |
Width | 1.6mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Pbfree Code | yes |