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BSP321PH6327XTSA1

Trans MOSFET P-CH 100V 0.98A 4-Pin SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSP321PH6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 239
  • Description: Trans MOSFET P-CH 100V 0.98A 4-Pin SOT-223 T/R (Kg)

Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Factory Lead Time 1 Week
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Contact Plating Tin
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Mount Surface Mount
Number of Elements 1
Mounting Type Surface Mount
Number of Channels 1
Package / Case TO-261-4, TO-261AA
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Number of Pins 4
Case Connection DRAIN
Weight 250.212891mg
Turn On Delay Time 5.9 ns
FET Type P-Channel
Transistor Element Material SILICON
Rds On (Max) @ Id, Vgs 900m Ω @ 980mA, 10V
Vgs(th) (Max) @ Id 4V @ 380μA
Halogen Free Halogen Free
Operating Temperature -55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds 319pF @ 25V
Current - Continuous Drain (Id) @ 25°C 980mA Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Packaging Tape & Reel (TR)
Rise Time 4.4ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Published 2012
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 16.5 ns
Series SIPMOS™
Continuous Drain Current (ID) 980mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -100V
Drain Current-Max (Abs) (ID) 0.98A
JESD-609 Code e3
Drain-source On Resistance-Max 0.9Ohm
Height 3.5mm
Length 6.5mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pbfree Code yes
See Relate Datesheet

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