Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Supplier Device Package | PG-SOT223-4 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2008 |
Series | SIPMOS® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | SMD/SMT |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |
Power Dissipation | 1.7W |
Turn On Delay Time | 4.6 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 25Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 94μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 154pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 170mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 10V |
Rise Time | 4.4ns |
Drain to Source Voltage (Vdss) | 400V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 68 ns |
Turn-Off Delay Time | 17 ns |
Continuous Drain Current (ID) | 170mA |
Threshold Voltage | 1.9V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 400V |
Dual Supply Voltage | 400V |
Input Capacitance | 154pF |
Drain to Source Resistance | 13.6Ohm |
Rds On Max | 25 Ω |
Nominal Vgs | 1.9 V |
Height | 1.6mm |
Length | 6.5mm |
Width | 6.7mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |