Parameters | |
---|---|
Power Dissipation | 1.8W |
Turn On Delay Time | 6.7 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 130mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 875pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 2.9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Rise Time | 9ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 26 ns |
Continuous Drain Current (ID) | 2.9A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -60V |
Drain to Source Breakdown Voltage | -60V |
Input Capacitance | 875pF |
Drain to Source Resistance | 110mOhm |
Rds On Max | 130 mΩ |
Height | 1.5mm |
Length | 40mm |
Width | 40mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Supplier Device Package | PG-SOT223-4 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2003 |
Series | SIPMOS® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Current Rating | -2.9A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |