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BSP62H6327XTSA1

BSP62H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSP62H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 318
  • Description: BSP62H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 1.8V
Max Breakdown Voltage 80V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BSP62
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Collector Emitter Breakdown Voltage 80V
See Relate Datesheet

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