Parameters | |
---|---|
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.8W Ta |
Power Dissipation | 1.8W |
Turn On Delay Time | 3.6 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
Vgs(th) (Max) @ Id | 1.4V @ 108μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 95pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 350mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V |
Rise Time | 3.5ns |
Drain to Source Voltage (Vdss) | 240V |
Drive Voltage (Max Rds On,Min Rds On) | 2.8V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 18.9 ns |
Turn-Off Delay Time | 17.9 ns |
Continuous Drain Current (ID) | 350mA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 240V |
Drain to Source Breakdown Voltage | 240V |
Input Capacitance | 76pF |
Drain to Source Resistance | 6Ohm |
Rds On Max | 600 mΩ |
Height | 1.6mm |
Length | 6.5mm |
Width | 3.5mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Supplier Device Package | PG-SOT223-4 |
Weight | 250.212891mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | SIPMOS® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |