Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
HTS Code | 8541.21.00.95 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 500mW Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 21m Ω @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 30μA |
Input Capacitance (Ciss) (Max) @ Vds | 1147pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3.8A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V |
Rise Time | 16.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Continuous Drain Current (ID) | 3.8A |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | 20V |
Drain-source On Resistance-Max | 0.021Ohm |
Feedback Cap-Max (Crss) | 60 pF |
RoHS Status | ROHS3 Compliant |