Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 500mW Tc |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 5 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 1.8 Ω @ 360mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 170μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 165pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 360mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Rise Time | 6ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 26 ns |
Turn-Off Delay Time | 71 ns |
Continuous Drain Current (ID) | 360mA |
Threshold Voltage | -1.5V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -100V |
Feedback Cap-Max (Crss) | 20 pF |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |