Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1997 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Voltage | 240V |
Power Dissipation-Max | 360mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 360mW |
Turn On Delay Time | 3.3 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 14 Ω @ 100mA, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 56μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 77pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 110mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 10V |
Rise Time | 3.1ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 13.7 ns |
Continuous Drain Current (ID) | 100mA |
Threshold Voltage | 1.4V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 240V |
Drain to Source Breakdown Voltage | 240V |
Dual Supply Voltage | 240V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 1.4 V |
Feedback Cap-Max (Crss) | 4.2 pF |
Height | 1.1mm |
Width | 3.05mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |