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BSS138WH6327XTSA1

BSS138WH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSS138WH6327XTSA1
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 693
  • Description: BSS138WH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 124.596154mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2002
Series SIPMOS®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Voltage 50V
Power Dissipation-Max 500mW Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 2.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 25V
Current - Continuous Drain (Id) @ 25°C 280mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.2 ns
Turn-Off Delay Time 6.7 ns
Continuous Drain Current (ID) 280mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 4.2 pF
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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