Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Number of Pins | 3 |
Weight | 124.596154mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2002 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Number of Channels | 1 |
Voltage | 50V |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Current | 2A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
Turn On Delay Time | 2.2 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 3.5 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id | 1.4V @ 26μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 280mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
Rise Time | 3ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8.2 ns |
Turn-Off Delay Time | 6.7 ns |
Continuous Drain Current (ID) | 280mA |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain to Source Breakdown Voltage | 60V |
Feedback Cap-Max (Crss) | 4.2 pF |
Height | 1mm |
Length | 2mm |
Width | 1.25mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |