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BSS159NH6327XTSA2

BSS159NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSS159NH6327XTSA2
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 171
  • Description: BSS159NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Input Capacitance (Ciss) (Max) @ Vds 39pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 5V
Rise Time 2.9ns
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 230mA
Threshold Voltage -2.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
FET Feature Depletion Mode
Feedback Cap-Max (Crss) 5.9 pF
Height 1.1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Power Dissipation 360mW
Turn On Delay Time 3.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5 Ω @ 160mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 26μA
Halogen Free Halogen Free
See Relate Datesheet

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