Parameters | |
---|---|
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 360mW Ta |
Element Configuration | Single |
Power Dissipation | 360mW |
Turn On Delay Time | 2.9 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 6 Ω @ 170mA, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 50μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 68pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 170mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 7V |
Rise Time | 2.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 0V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 11 ns |
Continuous Drain Current (ID) | 170mA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 100V |
Drain-source On Resistance-Max | 6Ohm |
FET Feature | Depletion Mode |
Feedback Cap-Max (Crss) | 7 pF |
Height | 1mm |
Length | 2.9mm |
Width | 1.3mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |