Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.75 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | FLAT |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 560mW Ta 12.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Case Connection | DRAIN |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 200mA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -240V |
Drain Current-Max (Abs) (ID) | 0.2A |
Drain to Source Breakdown Voltage | 240V |
Feedback Cap-Max (Crss) | 15 pF |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |