BSS215PH6327XTSA1
| Parameters | |
|---|---|
| Vgs (Max) | ±12V |
| Continuous Drain Current (ID) | 1.5A |
| Gate to Source Voltage (Vgs) | 12V |
| Max Dual Supply Voltage | -20V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 500mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 11μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 346pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| Rise Time | 9.7ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
See Relate Datesheet
