Parameters | |
---|---|
Published | 2012 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 500mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 140m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 6.3μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 294pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V |
Factory Lead Time | 1 Week |
Rise Time | 3.9ns |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 1.5A |
Number of Pins | 3 |
Gate to Source Voltage (Vgs) | 20V |
Transistor Element Material | SILICON |
Max Dual Supply Voltage | -30V |
Operating Temperature | -55°C~150°C TJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Packaging | Tape & Reel (TR) |
Lead Free | Lead Free |