BSS670S2LH6327XTSA1
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 2.26nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 24 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 540mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 55V |
| Drain Current-Max (Abs) (ID) | 0.54A |
| Drain-source On Resistance-Max | 0.825Ohm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 540mA |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 360mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 360mW |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 650m Ω @ 270mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 2.7μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 540mA Ta |
See Relate Datesheet
