Parameters | |
---|---|
Mount | Surface Mount |
Vgs(th) (Max) @ Id | 0.75V @ 11μA |
Mounting Type | Surface Mount |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 529pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2.3A Ta |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 2.5V |
Number of Pins | 3 |
Rise Time | 9.9ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 2.5V |
Weight | 1.437803g |
Vgs (Max) | ±8V |
Fall Time (Typ) | 3.7 ns |
Turn-Off Delay Time | 12 ns |
Transistor Element Material | SILICON |
Continuous Drain Current (ID) | 2.3A |
Gate to Source Voltage (Vgs) | 8V |
Max Dual Supply Voltage | 20V |
Drain-source On Resistance-Max | 0.057Ohm |
Operating Temperature | -55°C~150°C TJ |
Feedback Cap-Max (Crss) | 29 pF |
Height | 1mm |
Length | 2.9mm |
Packaging | Tape & Reel (TR) |
Width | 1.3mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Published | 2013 |
Series | Automotive, AEC-Q101, HEXFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
Factory Lead Time | 1 Week |
Turn On Delay Time | 7.5 ns |
FET Type | N-Channel |
Contact Plating | Tin |
Rds On (Max) @ Id, Vgs | 57m Ω @ 2.3A, 2.5V |