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BSS84AKM,315

BSS84AKM - 50 V, 230 mA P-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BSS84AKM,315
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 414
  • Description: BSS84AKM - 50 V, 230 mA P-channel Trench MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 340mW Ta 2.7W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 340mW
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) -230mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -50V
Drain-source On Resistance-Max 8.5Ohm
Drain to Source Breakdown Voltage -50V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 500μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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